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MAC210A8 9DBU0241 A3VREA SILICON 41200 61N33 HZ5250B 8SXB33M
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  data sheet 1 2000-07-01 double differential magneto resistor fp 420 l 90 b version 2.0 dimensions in mm gpx06896 1 2 3 4 5 6 r 1-2 1 2-3 r 2 3 r 4-5 r 5-6 4 5 6 0.045 0.025 <-0.1 (0.33) e / / e 0.4 0.2 max. (0.13) 0.55 0.45 3.3 3.1 1.76 1.56 0.239 0.233 0.45 0.55 2) 4) 1.1 1.2 0.55 0.65 2.76 2.96 3.75 3.55 4.2 4.0 b d a 0.04 d b 0.2 0.2 a 0.475 0.469 5.45 5.55 c 0.04 points punching- 1) if delivery as tape, seperate at punching-points. approx. weight 0.2 g 6.2 6.0 c incl. lacquer-cover (0.8) 6 fingers on both sides free of lacquer center-distance between the diff.-systems. b b 1...6 pin connection 3) 0.2 max. 1.1 1.2 1) 2) 3) features ? double differential magneto resistor on one carrier ? accurate intercenter spacing ? high operating temperature range ? high output voltage ? compact construction ? available in strip form for automatic assembly ? optimized intercenter spacing on modules m = 0.3 mm ? reduced temperature dependence of offset voltage typical applications ? incremental angular encoders ? detection of sense of rotation ? detection of speed ? detection of position
fp 420 l 90 b data sheet 2 2000-07-01 the double differential magneto resistor assembly consists of two pairs of magneto resistors, (l-type insb/nisb semiconductor resistors whose resistance value can be magnetically controlled), which are fixed to a silicon substrate. contact to the magneto resistors is achieved using a copper/polyimide carrier film known as tab. the basic resistance of each of the magneto resistors is 90 w . the two series coupled pairs of magneto resistors are actuated by an external magnetic field or can be biased by a permanent magnet and actuated by a soft iron target. type ordering code fp 420 l 90 b q65420-l90-b (singular) fp 420 l 90 b q65420-l90-b1 (taped)
data sheet 3 2000-07-01 fp 420 l 90 b absolute maximum ratings electrical characteristics ( t a = 25 c) parameter symbol limit values unit operating temperature t a C 40 / + 175 c storage temperature t stg C 40 / + 185 c power dissipation 1) p tot 800 mw supply voltage ( b = 0.2 t, t a = 25 c) v in 8v thermal conductivity Cattached to heatsink Cin still air g thcase g tha 20 1.5 mw/k mw/k nominal supply voltage ( b = 0.2 t) 2) v inn 5v basic resistance ( i < 1 ma, b = 0 t) r 01-3 160 ? 280 w center symmetry 3) m 3% relative resistance change ( r 0 = r 01-3 , r 04-6 at b = 0 t) b = 0.3 t 4) b = 1 t r b / r 0 > 1.7 > 7 C temperature coefficient b = 0 t b = 0.3 t b = 1 t tc r C 0.16 C 0.38 C 0.54 %/k %/k %/k 1) t = t case 2) t = t case , t < 80 c 3) 4) 1 t = 1 tesla = 10 4 gauss m r 01 2 C r 02 3 C C r 01 2 C -------------------------------- = 100% for r 01-2 > r 02-3 m r 04 5 C r 05 6 C C r 04 5 C -------------------------------- = 100% for r 04-5 > r 05-6
fp 420 l 90 b data sheet 4 2000-07-01 max. power dissipation versus temperature p tot = f ( t ), t = t case , t a typical mr resistance versus temperature r 01-3, 4-6 = f ( t a ), b = parameter maximum supply voltage versus temperature v in = f ( t ), b = 0.2 t typical mr resistance versus magnetic induction b r 01-3, 4-6 = f ( b ), t a = 25 c


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